Our recent research article “Proximity-induced anisotropic magnetoresistance in magnetized topological insulators” was featured by Applied Physics Letters. This article discusses the magnetoresistance in bilayers of topological insulators (Bi2Se3) and ferrimagnetic insulator (Y3Fe5O12; YIG). We observe that the orientation of the magnetization YIG controls the magnitude of the gap in the electronic band structure of the adjacent topological insulator.